Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1995-05-25
1998-11-10
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257706, 257712, 257713, 257717, 257720, H01L 2306, H01L 2310
Patent
active
058348409
ABSTRACT:
An electronic device package is provided, consisting of reaction bonded silicon nitride structural and dielectric components and conductor, resistor, and capacitor elements positioned with the package structural components. The package consists of a ceramic package base characterized by a dielectric constant less than 6, of reaction bonded silicon nitride, or a heat spreader material. An electrical conductor is positioned on, embedded in, or attached to the package base for making electrical contact to an electronic device supported on the base and in preferred embodiments, a resistor is attached to the package base. The invention also provides package sidewalls connected to the package base, preferably of reaction bonded silicon nitride, and at least one electrical conductor extending to an outside surface of the package sidewalls for making electrical contact to an electronic device supported by the package base. The reaction formed electronic device packages of the invention provide the ability to support high device signal frequencies, high device operational temperatures, and high environmental temperatures, due to the characteristics of the package materials. The reaction formed electronic device packages of the invention may be produced with a nitriding process during which the overall package structure exhibits minimal shrinkage. As a result, the reaction formed electronic device packages of the invention may be shaped to finished dimensions before the nitriding process with complicated and tight-tolerance geometries of package structural, conducting, resistive, and capacitive components.
REFERENCES:
patent: 3635510 (1972-01-01), Stoller et al.
patent: 4127630 (1978-11-01), Washburn
patent: 4351787 (1982-09-01), Martinengo et al.
patent: 4475007 (1984-10-01), Ohno
patent: 4633573 (1987-01-01), Scherer
patent: 4654315 (1987-03-01), Hsieh
patent: 4687655 (1987-08-01), Hunold et al.
patent: 4769272 (1988-09-01), Byrne et al.
patent: 4827082 (1989-05-01), Horiuchi et al.
patent: 4919868 (1990-04-01), Huang
patent: 4946630 (1990-08-01), Ezis
patent: 5093289 (1992-03-01), Braetsch et al.
patent: 5103239 (1992-04-01), Verzemnieks et al.
patent: 5142385 (1992-08-01), Anderson et al.
patent: 5158912 (1992-10-01), Kellerman et al.
patent: 5275985 (1994-01-01), Huang
patent: 5332697 (1994-07-01), Smith et al.
patent: 5356720 (1994-10-01), Creber et al.
patent: 5407502 (1995-04-01), Takenaka et al.
patent: 5448825 (1995-09-01), Lee et al.
patent: 5529959 (1996-06-01), Yamanaka
Yasutomi et al., "Evaluation of Silicon Powder Nitridation Catalyst by Activation Energy Measurements," J. Ceram. Jpn., Inter. Ed., V. 96, pp. 547-551, 1988.
Yasutomi et al., "Development of High-strength Si.sub.3 N.sub.4 Reaction-bonded SiC Ceramics," J. Ceram. Jpn, Inter. Ed., V. 96, pp. 762-766, 1988.
Yasutomi et al., "Development and Characterization of Electro-Conductive Si.sub.3 N.sub.4 Bonded TiN Ceramics,"J. Ceram. Jpn., Inter. Ed., V. 97, pp. 145-151, 1989.
Yasutomi et al., "Analyses of Microstructure and Sintering Mechanism of Si.sub.3 N.sub.4 -Bonded SiC Ceramics," J. Ceram. Jpn., Inter. Ed., V. 98, pp. 442-451, 1990.
Asakami et al., "Materials for electrode of alkali metal thermoelectric converter (AMTEC)(II)," J. Mat. Sci. Lett., V. 9, pp. 892-894, 1990.
Yasutomi et al., "Development of Reaction-Bonded Electro-Conductive TiN-Si.sub.3 N.sub.4 and Resistive Al.sub.2 O.sub.3 -Si.sub.3 N.sub.4 Composites," Ceram. Eng. Sci. Proc., V. 11, N. 7-8, pp. 857-867, 1990.
Yasutomi et al., "Development of Reaction-Bonded Electroconductive Silicon Nitride-Titanium Nitride and Resistive Silicon Nitride-Aluminum Oxide Composites," J. Am Ceram. Soc., V. 74, N. 4, pp. 950-957, 1991.
Yasutomi et al., "Reaction Sintering Property of Green Compact of Si and TiC Mixed Powders In Nitrogen," Mat. Res. Soc., 1991 Fall Meet., Symposium S, Boston, MA, Dec., 1991.
Allen, "Solid state metal-ceramic reaction bonding applications to transistor packages and advanced materials," Elect. Sci. Tech., V. 11, pp. 85-87, 1983.
Lashway, "A1N Thermal Management," Advanced Packaging, May/Jun., pp. 22-24, 1994.
Takeda, "Development of High-Thermal-Conductive SiC Ceramics," Ceramic Bulletin, vol. 67, No. 12, pp. 1961-1963, 1988.
Vel et al., "Cubic boron nitride: synthesis, physicochemical properties and applications," Mat. Sci. & Eng., V. B10, pp. 149-164, 1991.
Demazeau, "Growth of cubic boron nitride by chemical vapor deposition and high-pressure high-temperature synthesis," Diamond and Related Materials, V. 2, pp. 197-200, 1993.
Williams et al., "Assessment of carbon contamination in titanium nitride films deposited from the reaction of titanium (IV) chloride and amines," Mat. Res. Soc., Symp. V. 327, pp. 121-125, 1994.
Winter et al., "Single-source precursors to vanadium nitride thin films," Mat. Res. Soc., Symp. Proc. V. 327, pp. 109-113, 1994.
Winter et al., "Single-source precursors to niobium nitride and tantalum nitride films," Mat. Res. Soc., Symp. Proc. V. 327, pp. 103-108, 1994.
Deshpande et al., "Hot filament assisted CVD of titanium nitride films," Mat. Res. Soc., Symp. Proc. V. 327, pp. 115-120, 1994.
Jiang et al., "Preparation of TiN and TiC from a Polymeric Precursor," Chemistry of Materials, V. 3, No. 6, pp. 1132-1137, 1991.
Lindquisst et al., "Novel silicon nitride microstructures through processing of phase separated polysilazane gels," Mat. Res. Soc. Symp., Proc. V. 249, pp. 565-570, 1992.
Haggerty et al., "Processing and properties of reaction bonded silicon nitride made from laser synthesized silicon powders," MRS Symp. on Defect Props., Boston, MA, Dec. 2-4, 1985.
Haggerty et al., "High strength, oxidation resistant reaction-bonded silicon nitride from laser-synthesized silicon powder," Proc. 2nd Int. Symp., Ceramic Materials & Components for Eng., Lubeck-Travenmunde, Germany, Apr., 1986.
Haggerty, "Reaction bonded Si.sub.3 -N.sub.4 fiber composites," MIT ILP Workshop: Process., Microstr., Properties of Metal & Ceramic Matrix. Composites, Cambridge, MA, Nov. 18-19, 1986.
Ritter et al., "High-Strength Reaction-Bonded Silicon Nitride," Advanced Ceramic Materials, V. 3, N. 4, pp. 415-417, Jul., 1988.
Haggerty et al., "Properties of Reaction-Bonded Silicon Nitride Made from High Purity Silicon Powder," Ceramic Eng. Science Proc., V. 9, N. 7-8, pp. 1073-1078, 1988.
Sheldon et al., "The nitridation of high purity, laser-synthesized silicon powder to form reaction bonded silicon nitride," Ceramic Eng. & Science Proc., V. 9, N. 7-8, pp. 1061-1072, 1988.
Sheldon et al., "The Formation of Reaction Bonded Si.sub.3 N.sub.4 at Low Temperatures and in Short Times," Ceram. Eng. Sci. Proc. V. 10, N. 7-8, pp. 784-793, 1989.
Lightfoot et al., "Nitriding Kinetics of Si-SiC Powder Mixtures as Simulations of Reaction Bonded Si.sub.3 N.sub.4 -SiC Composites," Ceram. Eng. Sci. Proc. V. 10, N. 9-10, pp. 1035-1048, 1989.
Haggerty et al., "Oxidation and Fracture Strength of High-purity Reaction-bonded Silicon Nitride," Jnl. Amer. Ceram. Soc., V. 72, N. 9, pp. 1675-1679, Sep. 1989.
Haggerty et al., "Reaction-Based Processing Methods for Ceramics and Composites," Ceram. Eng. Sci. Proc., V. 11, No. 7-8, pp. 757-781, 1990.
Sheldon et al., "Nitrogen Adsorption onto Silane-Derived Silicon Powders," Jnl. Amer. Ceram. Soc., V. 74, N. 6, pp. 1417-1424, Jun., 1991.
Lightfoot et al., "Processing and Properties of SiC Whisker-and Particulate-Reinforced Reaction Bonded Si.sub.3 N.sub.4," Ceram. Eng. Sci. Proc. V. 12, N. 7-8, pp. 1265-1291, 1991.
Sheldon et al., "Formation of Reaction-Bonded Silicon Nitride from Silane-Derived Powders: Macroscopic Kinetics and Related Transport Phenomena," Jnl. Amer. Ceram. Soc. V. 75, N. 3, pp. 677-685, Mar., 1992.
Han et al., "Pyrolysis Chemistry of Poly(organosilazanes) to Silicon Ceramics," Chem. Mater., V. 4, pp. 705-711, 1992.
Lightfoot et al., "Relationships Between Toughness and Microstructure of Reaction Bonded Si.sub.3 N.sub.4," Ceram. Eng. Sci. Proc., V. 13, N. 9-10, pp. 1024-1031, 1992.
Nair et al., "Mechanical behavior of silicon carbide particulate reinforced reaction bonded silicon nitride matrix composite
Goodhue William D.
Haggerty John S.
Kenney George B.
Lightfoot Annamarie
Murphy R. Allen
Charles Stark Draper Laboratory, Inc.
Lober Theresa A.
Massachusetts Institute of Technology
Whitehead Carl W.
LandOfFree
Net-shape ceramic processing for electronic devices and packages does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Net-shape ceramic processing for electronic devices and packages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Net-shape ceramic processing for electronic devices and packages will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1519343