Neighbor effect cancellation in memory array architecture

Details Neighbor effect cancellation in memory array architecture Neighbor effect cancellation in memory array architecture

2005-08-30

2005-08-30

Lam, David (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185210

Reexamination Certificate

active

06937523

ABSTRACT:
Non-volatile memory (NVM) cells are sensed using a forced neighbor signal to eliminate improper readings generated by a neighbor effect. A selected NVM cell is sensed using a near-ground signal by applying a potential to a first terminal, coupling a second terminal to ground, and then decoupling the second terminal and comparing the resulting cell signal with a reference signal as both signals are developing (i.e., increasing from ground). A forced neighbor signal is applied to one more neighboring cells such that as the sensed cell signal develops (increases from ground), the forced neighbor signal develops at a similar rate, thereby maintaining a voltage across the neighboring cells close to zero and thus preventing leakage of the sensed cell signal through the neighbor cell(s). A dc sensing approach utilizes a current source and grounded resistor to minimize leakage through the neighbor cell(s).

REFERENCES:
patent: 6128226 (2000-10-01), Eitan et al.
patent: 6178118 (2001-01-01), Lin et al.
patent: 6351415 (2002-02-01), Kushnarenko

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