Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-15
2008-01-15
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S230060, C365S185180
Reexamination Certificate
active
10713841
ABSTRACT:
In one embodiment, the present invention includes a method to supply a negative voltage to at least one deselected wordline of a memory array. Further, while the negative voltage is supplied to deselected wordlines, a positive voltage may be supplied to a selected wordline. The memory array may be a flash memory incorporating multi-level cell architecture, in one embodiment.
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Javanifard Jahanshir
Ly Tom H.
Sundaram Rajesh
Tedrow Kerry D.
Walimbe Priya
Intel Corporation
Le Thong Q.
Trop Pruner & Hu P.C.
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