Negative working resist material, method for the production of t

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430175, 430169, 430280, 430921, 430922, 430313, 430330, G03F 7075

Patent

active

054570034

ABSTRACT:
A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer of the organic polymer and top layer of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. the temperature of the post baking is preferably lower than that of the prebaking.

REFERENCES:
patent: 4665006 (1987-05-01), Sachdev et al.
patent: 4985342 (1991-01-01), Muramoto et al.
patent: 5079129 (1992-01-01), Roth et al.
patent: 5098816 (1992-03-01), Babich et al.
patent: 5110711 (1992-05-01), Babich et al.
patent: 5141840 (1992-08-01), Mizutani et al.
patent: 5158854 (1992-10-01), Imamura et al.
"A Photo-Patternable Stress Relief Material for Plastic Packaged Integrated Circuits", Cagan et al., IEEE Trans. on Components, Hybrids and Mannufacturing Technology, Dec. 1988, No. 4, New York, pp. 611-615.
"Multilayer Resist Systems and Processing", Lin, Solid State Technology, May 1983, pp. 105-112.
"A highly etch resistant, negative resist for deep-UV and electron beam lithography", McKean, et al., SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 110-118.
"Chemical Amplification Negative Resist Systems Composed of Novolak, Silanols, and Acid Generators", Ueno, et al., SPIE vol. 1262 Advances in Resist Technology and Processing VII (1990), pp. 26-31.
"28a-PC-8 Silicon-containing chemical amplification resist for electron beam lithography", 51st Scientific Election Meeting of Japanese Supply Physics Association, Preliminary Print. (1990).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Negative working resist material, method for the production of t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Negative working resist material, method for the production of t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative working resist material, method for the production of t will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2309680

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.