Negative semiconductor resistance

Oscillators – Solid state active element oscillator – Significant distributed parameter resonator

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357 1, 357 9, 357 13, 357 55, 357 57, H01L 4500

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active

043170919

ABSTRACT:
A negative semiconductor resistance comprises two separate semiconductor elements of the same conductivity characteristic and with at least three areas of contact of a diameter less than 1.10.sup.-2 cm, a voltage being applied to the semiconductor elements such that it generates an electrical field which is greater than the breakdown field strength at the contact areas.

REFERENCES:
patent: 2728034 (1955-12-01), Kurshan
patent: 3451126 (1969-06-01), Yamamoto
patent: 3745427 (1973-07-01), Hilsum et al.
patent: 4185253 (1980-01-01), Lade
patent: 4187513 (1980-02-01), Spellman

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