Negative resistance heterojunction devices

Details Negative resistance heterojunction devices Negative resistance heterojunction devices

1979-07-26

1981-03-17

Edlow, Martin H.

357 4, 357 30, 357 57, H01L 29161

Patent

active

042570557

ABSTRACT:
Described is a heterostructure semiconductor device of sandwich type construction. The central layer exhibits high charge carrier mobility and a relatively narrow band gap characteristic. The outer sandwich layers exhibit low charge carrier mobilities and a larger band gap characteristic. Under quiescent conditions, the charge carriers from the outer sandwich layers reside in the central layer due to the "potential well" created by the band gap difference between the layers. The application of an appropriate electrical field to the central layer, aligned with the interface between the layers, causes a very rapid transfer of the electrons residing therein to the outer sandwich layers. This transfer results in the device exhibiting a negative resistance characteristic. Two and three terminal switching applications of the device are described as well as its application as a radiant energy detector.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki
patent: 3893148 (1975-07-01), Madjid
patent: 3982207 (1976-09-01), Dingle
patent: 4103312 (1978-07-01), Chang
patent: 4163237 (1979-07-01), Dingle
patent: 4163238 (1979-07-01), Esaki

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