Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-05-22
2007-05-22
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE47001, C257SE27002
Reexamination Certificate
active
10561530
ABSTRACT:
A negative resistance field-effect element that is a negative differential resistance field-effect element capable of achieving negative resistance at a low power supply voltage (low drain voltage) and also enabling securement of a high PVCR is formed on its InP substrate11having an asymmetrical V-groove whose surface on one side is a (100) plane and surface on the other side is a (011) plane with an InAlAs barrier layer (12) that has a trench (TR) one of whose opposed lateral faces is a (111) A plane and the other of which is a (331) B plane. An InGaAs quantum wire (13) that has a relatively narrow energy band gap is formed at the trench bottom surface as a high-mobility channel. An InAlAs modulation-doped layer (20) having a relatively wide energy band gap is formed on the quantum wire as a low-mobility channel. A source electrode (42) and a drain electrode (43) each in electrical continuity with the quantum wire (13) constituting the high-mobility channel through a contact layer (30) and extending in the longitudinal direction of the quantum wire (13) as spaced from each other, and a gate electrode (41) provided between the source electrode (42) and the drain electrode (43) to face the low-mobility channel (20) through an insulating layer or a Schottky junction, are provided. Owing to the foregoing configuration, a very narrow-width quantum wire whose lateral confinement size can, without restriction by the lithographic technology limit, be made 100 nm or less is usable as a high-mobility channel, whereby there can be obtained a negative resistance field-effect element that develops a negative characteristic at a low power supply voltage and enables securement of a high PVCR.
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Jang Kee-Youn
Ogura Mutsuo
Sugaya Takeyoshi
Sugiyama Yoshinobu
Japan Science and Technology Corporation
National Institute of Advanced Industrial Science and Technology
Ngo Ngan V.
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