Negative resistance element composed of a semiconductor element

Details Negative resistance element composed of a semiconductor element Negative resistance element composed of a semiconductor element

1969-08-25

1977-05-10

Wojciechowicz, Edward J.

357 1, 357 3, H01L 2724, H01L 2726, H01L 2966

Patent

active

040231968

ABSTRACT:
An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the element being constructed so that the sectional area of the region near the anode is made larger than the sectional area of the other regions of the element, whereby the distribution of the high electric field in the interior of the element is made uniform along the element, that is, from the region near the anode toward the region near the cathode to thereby broaden the region having an effective negative resistance. Furthermore, and in an alternative embodiment, there is disclosed a negative resistance element in whch the region near the cathode besides the region near the anode is also made to have a larger sectional area than the other regions of the element.

REFERENCES:
patent: 3365583 (1968-01-01), Gunn
patent: 3466563 (1969-09-01), Thim
patent: 3490051 (1970-01-01), Hakki et al.
patent: 3600705 (1971-08-01), Tantraporn
IEEE Transactions on Electron Devices, "Two-Port Microwave Amplification in Long Samples of Gallium Arsenide" by Robson et al., Sept. 1967, pp. 612-615.
IEEE Transactions on Electron Devices, "Microwave Phenomena in Bulk GaAs" by Hakki et al., Jan. 1966, pp. 94-105.
Bell Laboratories Record, "Bulk Effect Devices for Future Transmission Systems" by Engelbrecht, June 1967, pp. 192-197.

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