Negative resistance element circuit combinations

Details Negative resistance element circuit combinations Negative resistance element circuit combinations

1972-07-20

1980-01-08

Rolinec, K. V.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

331107G, H03B 714, H03F 310

Patent

active

041829646

ABSTRACT:
Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.

REFERENCES:
patent: 3526844 (1970-09-01), Bartelink et al.
patent: 3544914 (1970-12-01), Suga
patent: 3551831 (1970-12-01), Kino et al.

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