Negative resistance device

Details Negative resistance device Negative resistance device

1976-02-13

1977-10-11

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307288, 307304, 357 42, 357 54, 340173NR, G11C 1140, H03K 3353, G11C 502, H01L 2978

Patent

active

040537986

ABSTRACT:
A negative resistance device formed by series-connection of a complementary pair of insulated gate type FETs (field effect transistors), the source of the FETs being connected to each other and the gates of each of the FETs being connected to the respective drain of the other FET at least one FET having a double layered gate insulation film under the gate electrode, thereby forming a non-volatile memory element. The negative resistance device acquires or loses negative resistance characteristics by responding to signals to the gates, thereby memorizing the signals and resulting in a highly efficient memory which requires little power in writing-in, erasing and memory-holding.

REFERENCES:
patent: 3603811 (1971-09-01), Day et al.
patent: 3843954 (1974-10-01), Hansen et al.
patent: 3906296 (1975-09-01), Maserjian et al.
patent: 3908182 (1975-09-01), Lampe et al.
Ostefjells, "Negative Resistance Circuit Using Two Complementary Field Effect Transistors"; Proceedings of the IEEE, vol. 53, No. 4; Apr. 1965; p. 404.

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