Negative resist with oxygen plasma resistance

Details Negative resist with oxygen plasma resistance Negative resist with oxygen plasma resistance

1986-03-06

1987-10-20

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 431, 430270, 430296, B05D 306

Patent

active

047013427

ABSTRACT:
Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.

REFERENCES:
patent: 4551417 (1985-11-01), Suzuki et al.
"Copolymers of Trimethylsilylstyrene with Chloromethylstyrene for a Bi-Layer Resist System", Journal of the Electrochemical Society, vol. 130, No. 9, Sep. 1983, pp. 1962-1964, M. Suzuki et al.

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