Negative resist for X-ray and electron beam lithography and meth

Details Negative resist for X-ray and electron beam lithography and meth Negative resist for X-ray and electron beam lithography and meth

1976-04-26

1977-12-06

Newsome, John H.

Stock material or miscellaneous articles

Composite

Of silicon containing

96 351, 96 362, 96115P, 250492A, 427 43, B05D 306

Patent

active

040618293

ABSTRACT:
A class of chlorinated or brominated polymeric negative resists for high resolution X-ray or electron lithographic processes is described. Chlorine and bromine atoms have a generally high mass absorption coefficient for X-rays and can be incorporated into the polymer in high weight percents. The chlorinated resists are especially sensitive to the 4.37 Angstrom characteristic X-rays from a Pd target.

REFERENCES:
patent: 3418301 (1968-12-01), Spivey
patent: 3480600 (1969-11-01), Pumpelly et al.
patent: 3515656 (1970-06-01), Huang et al.
patent: 3563809 (1971-02-01), Wilson
patent: 3867318 (1975-02-01), Nishikubo et al.
patent: 3987215 (1976-10-01), Cortellino
Thompson et al., J. Electrochemical Soc., vol. 121, Nov. 1974 pp. 1500-1503.

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