Negative photoresist composition using polymer having 1,2-diol s

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4302701, 430325, 430330, 430910, G03F 7004

Patent

active

061468061

ABSTRACT:
It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source.
The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) ##STR1## , a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained. Since the polymer has not a benzene ring, unlike a base polymer of a conventional negative resist, the polymer has high transparency to ArF excimer laser beam and also has high etching resistance because of its bridged alicyclic group.

REFERENCES:
patent: 4491628 (1985-01-01), Ito et al.
patent: 5665518 (1997-09-01), Maeda et al.
patent: 5770346 (1998-06-01), Iwasa et al.
patent: 5851727 (1998-12-01), Choi et al.
patent: 6030747 (2000-02-01), Nakano et al.
Hofer, D., et al., "193 nm Photoresist R&D: The Risk & Challenge," Journal of Photopolymer Science and Technology, vol. 9, No. 3, pp. 387-398 (1996).
Thackeray, J., et al., "Deep UV ANR Photoresist for 248 nm Excimer Laser Photolithography," Proceedings of SPIE, vol. 1056, pp. 34-47 (1989).
Takechi, S., et al., "Allcyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification," Journal of Photopolymer Science & Technology, vol. 5, No. 3, pp. 439-446 (1992).
Allen, R.D., et al., "Resolution and ETCH Resistance of a Family of 193 nm Positive Resists," Journal of Photopolymer Science and Technology, vol. 8, No. 4, pp. 623-636 (1995).
Allen, R.D., et al., "Progrees in 193 nm Positive Resists," Journal of Photopolymer Science and Technology, vol. 9, No. 3, pp. 465-474 (1996).
Maeda, K., et al., "Novel Alkaline-Soluble Alicyclic Polymer Poly(TCDMACOOH) for ArF Chemically Amplified Positive Resists," Proceedings of SPIE, vol. 2724, pp. 377-398 (1996).
Crivello, J.V., et al., "A New Preparation of Triarylsulfonium and-selenonium Salts via the Copper (II)-Catalyzed Arylation of Sulfides and Selenides with Diaryliodonium Salts," J. Org. Chem., vol. 43, No. 15, pp. 3055-3058n (1978).
Crivello, J.V., et al., "New Photoinitiators for Cationic Polymerization," J. Polymer Sci., Symposium No. 56, pp. 383-395 (1976).
Houlihan, F.M., "The Synthesis, Characterization and Lithography of a .alpha.-Substituted 2-Nitrobenzyl Arylsulfonate Photo-Acid Generators with Improved Resistance to Post Exposure Bake," Proceedings of SPIE, vol. 2195, pp. 137-151 (1994).
Ueno, T., et al., "Chemical Amplification Positive Resist Systems Using Novel Sulfonates as Acid Generators," Proceedings of PME, pp. 413-424 (1989).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Negative photoresist composition using polymer having 1,2-diol s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Negative photoresist composition using polymer having 1,2-diol s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative photoresist composition using polymer having 1,2-diol s will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2063593

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.