Negative ion extractor for a plasma etching apparatus

Details Negative ion extractor for a plasma etching apparatus Negative ion extractor for a plasma etching apparatus

1977-12-30

1979-06-19

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204164, 204298, B01K 100, C23F 102

Patent

active

041585895

ABSTRACT:
Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

REFERENCES:
patent: 3336211 (1967-08-01), Mayer
patent: 3361659 (1968-01-01), Bertelson
patent: 3863074 (1975-01-01), O'Hanlon et al.
patent: 3904366 (1975-09-01), Grasenick
patent: 3994793 (1976-11-01), Haruilchuck et al.
patent: 4006340 (1977-02-01), Gorinas
patent: 4010089 (1977-03-01), Stowell et al.
patent: 4020350 (1977-04-01), Ducas
patent: 4085332 (1978-04-01), Fletcher
patent: 4094764 (1978-06-01), Boucher et al.
patent: 4119881 (1978-10-01), Calderon
patent: 4123316 (1978-10-01), Tsuchimoto

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