Negative ion beam selective etching process

Details Negative ion beam selective etching process Negative ion beam selective etching process

1982-06-30

1983-11-08

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, C23C 1500, C23F 100

Patent

active

044140690

ABSTRACT:
A negative ion etching process is described for etching a substrate, where the negative ions are sputtered from a target by a sputtering gas. The negative ions are released from the target and are accelerated toward the substrate, which they strike as either negative ions or energetic neutrals. The improvement adds an inhibiting substance (hydrogen) to the sputtering gas to dramatically affect the etch rates of the substrate. In one example, the ratio of the etch rates of Si and SiO.sub.2 are changed by large amounts by the addition of hydrogen to a sputtering gas comprising an inert species, such as argon.

REFERENCES:
patent: 4132614 (1979-01-01), Cuomo et al.
patent: 4250009 (1981-02-01), Cuomo et al.
J. J. Cuomo et al, "Significance of Negative Ion Formation In Sputtering and SIMS Analysis", J. Vac. Sci. Technol., vol. 15, pp. 281-287 (1978).
J. M. E. Harper et al, "Mean Free Path Of Negative Ions In Diode Sputtering", J. Vac. Sci. Technol., vol. 15, pp. 1597-1600 (1978).

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