Negative impedance transistor device

Details Negative impedance transistor device Negative impedance transistor device

1975-06-16

1977-06-07

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307249, 307251, 331115, 333 80T, 357 43, H03K 1760, H03B 1700

Patent

active

040285626

ABSTRACT:
Transistor device exhibiting negative resistance characteristics includes an enhancement mode insulated gate field effect transistor interacting with an integral bipolar transistor. The transistor device has a bulk region separated from a shallow substrate region by a pn-junction located in proximity to source and drain regions of the field effect transistor. The source region also serves as the emitter, the substrate region serves as the base, and the bulk region serves as the collector of the integral bipolar transistor wherein the substrate base is left floating. Normally, the collector of the bipolar transistor is connected to the gate of the field effect transistor, and a resistor of finite value is included in the gate circuit. Oscillator, astable multivibrator, gated oscillator, gated astable multivibrator, and bistable multivibrator circuits are illustratively constructed with the transistor device.

REFERENCES:
patent: 3130378 (1964-04-01), Cook, Jr.
patent: 3553541 (1971-01-01), King
patent: 3636470 (1972-01-01), Olivei et al.

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