Negative effective mass semiconductor device and circuit

Details Negative effective mass semiconductor device and circuit Negative effective mass semiconductor device and circuit

1991-04-22

1993-07-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

With means to limit area of breakdown

257603, H01L 2990

Patent

active

052296369

ABSTRACT:
An active semiconductor device having a negative resistance based upon a negative effective mass of carriers in the semiconductor. A PN junction formed between semiconductor regions of P and N conductivity types is biased in a constant steady state current condition of a fixed reversible break down in the reverse direction based on the avalanche phenomenon, then the carriers may have negative effective mass in all directions within the region in which the carriers moved out of the transition region and are not so many times scattered by the lattice. The negative resistance relying upon this condition can be directly obtained as output by providing two output electrodes on one of the surfaces of the two types of semiconductor regions which sandwich the PN junction.

REFERENCES:
patent: 4458260 (1984-07-01), McIntyre et al.
patent: 5057879 (1991-10-01), Pigott et al.

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