Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-05-17
2005-05-17
Lebentritt, Michael S. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S011000, C257S014000, C257S017000, C257S201000, C257S213000
Reexamination Certificate
active
06894327
ABSTRACT:
A negative differential resistance device is disclosed which is particularly suited as a replacement for conventional pull-up and load elements such as NDR diodes, passive resistors, and conventional FETs. The NDR device includes a charge trapping layer formed at or extremely near to an interface between a substrate (which can be silicon or SOI) and a gate insulation layer. The NDR device can be shut off during static operations to further reduce power dissipation.
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Bever Hoffman & Harms LLP
Harms Jeanette S.
Lebentritt Michael S.
Menz Douglas
Progressant Technologies, Inc.
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