Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-11-03
2010-06-29
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S245000, C257S249000, C257SE27100
Reexamination Certificate
active
07745820
ABSTRACT:
A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.
REFERENCES:
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 2003/0086214 (2003-05-01), Shin
patent: 2005/0270442 (2005-12-01), Yang et al.
patent: 2006/0160307 (2006-07-01), Joo et al.
Yoon et al., “Room-temperature negative differential resistance in polymer tunnel diodes . . . ,” Applied Physics Letters 87, 203506, 3 pages, 2005.
Sudirgo et al., “Monolithically integrated Si/SiGe resonant interband tunnel . . . ,” Solid-State Electronics 48, pp. 1907-1910, 2004.
Xu et al., “Photoresponsivity of polymer thin-film transistors based on . . . ,” Applied Physics Letters, vol. 85, No. 18, pp. 4219-4221, 2004.
Xu et al., “High electric-field effects on short-channel polythiophene polymer . . . ,” Journal of Applied Physics, vol. 95, No. 3, pp. 1497-1501, 2004.
Borekaert et al., “A Monolithic 4-Bit 2-Gsps Resonant Tunneling . . . ,” IEEE Journal of Solid-State Circuits, vol. 33, No. 9, pp. 1342-1349, 1998.
Cidronali et al., “Ultralow DC Power VCO Based on InP-HEMT and Heterojunction Interband . . . ,” IEEE Transactions on Microwave Theory and Techniques, vol. 50, No. 12, pp. 2938-2946, 2002.
Van Der Wagt, “Tunneling-Based SRAM,” Proceedings of the IEEE, vol. 87, No. 4, pp. 571-595, 1999.
Maezawa et al., “Functions and Applications of Monostable-Bistable Transition Logic Elements . . . ,” IEEE Transactions on Electron Devices, vol. 31, No. 2, pp. 148-154, 1994.
Chen et al., “Large On-Off Ratios and Negative Differential Resistance . . . ,” Science Magazine, vol. 286, pp. 1550-1552, 1999.
Collier et al., “Electronically Configurable Molecular-Based Logic Gates,” Science Magazine, vol. 285, pp. 391-394, 1999.
Reed et al., “Molecular random access memory cell,” Applied Physics Letters, vol. 78, No. 23, pp. 3735-3737, 2001.
Wang et al., “Room-temperature negative differential resistance in nanoscale molecular junctions,” Applied Physics Letters, vol. 77, No. 8, pp. 1224-1226, 2000.
Le et al., “Negative differential resistance in a bilayer molecular junction,” Applied Physics Letters, vol. 83, No. 26, pp. 5518-5520, 2003.
Khondaker et al., “Electron transport through single phenylene-ethnylene molecular . . . ,” Applied Physics Letters, vol. 85, No. 4, pp. 645-647, 2004.
Burroughes et al., “Light-emitting diodes based on conjugated polymers,” Nature Publishing Group, Vo.. 347, vol. 347, pp. 539-541, 1990.
Broms et al., “Calcium electrodes in polymer LEDs,” Synethetic Metals 74, pp. 179-181, 1995.
Cimrova et al., “Anomalous electrical characteristics, memory phenomena and microcavity . . . ,” Synthetic Metals 76, pp. 125-128, 1996.
Pal et al., “Quinquethiophene light-emitting diodes with molecular dimensions,” Physical Review B, vol. 55, No. 3,. 1306-1309, 1997.
Manca et al., “Effect of oxygen on the electrical characteristics of PPV-LEDs,” Optical Materials 9, pp. 134-137, 1998.
Berleb et al., “Anomalous current-voltage characteristics in organic ligh-emitting devices,” Synethic Metals 102, pp. 1034-1037, 1999.
Xu et al., “Organic Negative-Resistance Devices Using PPV Containing . . . ,” Journal of Polymer Science: Part B, vol. 39, pp. 589-593, 2001.
Yu et al., “Anomalous current-voltage characteristics of polymer light-emitting diodes,” Physical Review B, vol. 65, pp. 115211(1-5), 2002.
Moller et al., “A polymer/semiconductor write-once read-many-times memory,” Nature, vol. 426, pp. 166-169, 2003.
Ouyang et al., “Programmable polymer thin film and non-volatile memory device,” Naure Materials, vol. 3, pp. 918-922, 2004.
Tang et al., “Memory Effect and Negative Differential Resistance by . . . ,” Advanced Materials 17, pp. 2307-2311, 2005.
Auer et al., “Low-Voltage MOBILE Logic Module Based on Si/SiGe Interband . . . ,” IEEE Electron Device Letters, vol. 22, No. 5, pp. 215-217, 2001.
Tinoco et al., “Room temperature plasma oxidation mechanism to obtain ultrathin . . . ,” Microelectronics Reliability 43, pp. 895-903, 2003.
Kolesnikov et al., “Anomalous current-voltage characteristics of thin polymer films,” Phys. Stat Sol. (a) 200, No. 2, pp. 388-392, 2003.
Lyo et al., “Negative Differential Resistance on the Atomic Scale: Implications . . . ,” Science, New Series, vol. 245, No. 4924, pp. 1369-1371, 1989.
Eppler et al., “Charge transport in porous nanoacrystalline titanium dioxide,” Physica E. 14, pp. 197-202, 2002.
Burns et al., “The plasma oxidation of titanium thin films to form dielectric layers,” J. Appl. Phys. 66 (6), pp. 2320-2324, 1989.
Berger Paul R.
Yoon Woo-Jun
Fay Sharpe LLP
Louie Wai-Sing
The Ohio State University
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