Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-29
2006-08-29
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S025000, C257S008000, C365S232000
Reexamination Certificate
active
07098472
ABSTRACT:
A two-terminal NDR device can be formed by coupling the gate and drain of an NDR-capable FET, such that the coupled gate and drain form a first terminal and the source of the NDR-capable FET forms the second terminal. By applying an appropriate body bias between the body and source of an NDR-capable FET configured in this manner, the NDR-capable FET can be forced to operate with a negative threshold voltage, thereby allowing the resulting two-terminal device to exhibit the desired NDR characteristics. This two-terminal device can, for example, be used as a load element in a static random access memory (SRAM) cell and various other circuits where the NDR behavior of the device would be beneficial.
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Bever Hoffman & Harms LLP
Harms Jeanette S.
Nelms David
Nguyen Thinh T
Progressant Technologies, Inc.
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