Negative differential resistance element

Details Negative differential resistance element Negative differential resistance element

1987-01-29

1988-11-22

James, Andrew J.

357 16, 357 4, H01L 2906, H01L 29205, H01L 2970

Patent

active

047869577

ABSTRACT:
A negative differential resistance element, the characteristics of which can be modulated externally, is provided by a sequential arrangement of an n-type GaAs emitter layer, a non-doped AlGaAs first barrier layer, an n-type GaAs base layer, a second barrier layer of a superlattice composed of coupled non-doped AlAs and GaAs thin layers, and an n-type collector layer. The conductivity of the emitter, base, and collector layers may be changed to p-type.

REFERENCES:
"Negative Resistance of Semiconductor Heterjunction Diodes Owing to Transmission Resonance", Y. Zohta, J. Appln. Phys. 57(6), Mar. 15, 1986, pp. 2234-2236.
"A New Functional Resonant-Tunneling Hot Electron Transistor (RHET)", N. Yokoyama et al, Japanese Journal of Applied Physics, vol. 24, No. 11, Nov. 1985, pp. L853-L854.

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