Negative differential resistance device based on tunneling throu

Details Negative differential resistance device based on tunneling throu Negative differential resistance device based on tunneling throu

1997-08-13

1999-04-20

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

257199, H01L 2988

Patent

active

058959343

ABSTRACT:
A solid state electronic device exhibiting negative differential resistance s fabricated by depositing a thin layer of amorphous silicon on a single crystal substrate, doped N.sup.+. The amorphous silicon is simultaneously crystallized and oxidized in a dry N.sub.2 and O.sub.2 mixture. The result is a layer of amorphous Sio.sub.2 surrounding microclusters of crystalline silicon. A layer of polycrystalline silicon is deposited to a thickness of approximately 0.5 micron. Ohmic metal contacts are made to the top and bottom. These active layers are isolated by insulating SiO.sub.2. A bias voltage applied between the metal contacts results in negative differential resistance due to tunneling through resonant energy levels in microclusters.

REFERENCES:
patent: 3277313 (1966-10-01), Unterkofler
patent: 5051786 (1991-09-01), Nicollian et al.
patent: 5206523 (1993-04-01), Goesele et al.
patent: 5606177 (1997-02-01), Wallace et al.

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