Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2006-11-14
2006-11-14
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S144000
Reexamination Certificate
active
07135931
ABSTRACT:
Power amplifiers are disclosed that demonstrate improved linearity and efficiency in applications requiring significant peak-to-average ratios (PAR). A power amplifier in accordance with the present invention comprises a first transistor in an input stage that converts DC power into AC power; and a second transistor in a negative conductance stage that has a current-voltage characteristic with at least two slopes. The at least two slopes of the current-voltage characteristic are separated by a break point that may be controlled. The power amplifier may also include a non-dissipative two-port device that has two AC ports. The non-dissipative two-port device has a Z matrix with two zero-valued diagonal elements and two complex valued off-diagonal elements having a same sign and only imaginary parts for an operating frequency. In one implementation, the diagonal entries of the Z matrix are small at twice the operating frequency.
REFERENCES:
patent: 6639464 (2003-10-01), Hellberg
patent: 6917246 (2005-07-01), Thompson
Agere Systems Inc.
Nguyen Hieu
Pascal Robert
LandOfFree
Negative conductance power amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Negative conductance power amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative conductance power amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3692041