Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Patent
1997-11-12
2000-04-18
Dang, Trung
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
438310, 438361, 438430, H01L 21331
Patent
active
060514744
ABSTRACT:
The tendency of mobile positive ions to be transported into device regions of a bipolar transistor is effectively minimized by surrounding the transistor with a `positive ion`-attracting electric field, preferably by applying a prescribed bias to the fill material of a conductive trench that surrounds the device. The trench which surrounds a respective device to be protected contains dielectric material disposed along sidewalls of the trench. The trench contains material such as undoped polysilicon, which is capable of distributing a voltage, so that the material in the trench is insulated by dielectric material from an adjacent portion of the semiconductor substrate surrounded by the trench. In order to prevent mobile positive ions from moving into a device region in response to temperature bias stress and thereby degrade an operational parameter of the transistor, a predefined (relatively negative) bias voltage is applied to the material in the trench. By relatively negative is meant that the magnitude of the predefined bias voltage is established to be no more positive than half the difference between the most positive and the most negative of bias voltages that are applied to the device. Preferably, the prescribed bias voltage corresponds to the most negative of the plurality of bias voltages of the transistor.
REFERENCES:
patent: 4470062 (1984-09-01), Muramatsu
Dang Trung
Intersil Corporation
Wands Charles E.
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