Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-09-20
1995-10-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 23, 257 25, 257 29, 257184, H01L 29205, H01L 3108
Patent
active
054593344
ABSTRACT:
A quantum wire embedded in another material or a quantum wire which is free standing. Specifically, the quantum wire structure is fabricated such that a quantum well semiconductor material, for example Gallium Arsenide (GaAS), is embedded in a quantum barrier semiconductor material, for example Aluminum Arsenide (AlAs). Preferably, the entire quantum wire structure is engineered to form multiple subbands and is limited to a low dimensional quantum structure. The dimensions of the quantum wire structure are preferably around 150.times.250 .ANG.. This structure has a negative absolute conductance at a predetermined voltage and temperature. As a result of the resonant behavior of the density of states, the rates of electron scattering in the passive region (acoustic phonon and ionized impurity scattering as well as absorption of optical phonons) decrease dramatically as the electron kinetic energy increases.
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Dutta Mitra
Mickevicius Rimvydas
Mitin Vladimir V.
Stroscio Michael A.
Anderson William H.
Jackson Jerome
The United States of America as represented by the Secretary of
Zelenka Michael
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