Near single-crystalline, high-carrier-mobility silicon thin...

Stock material or miscellaneous articles – Composite – Of silicon containing

Reexamination Certificate

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C428S698000, C428S699000, C428S701000, C428S702000

Reexamination Certificate

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07608335

ABSTRACT:
A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800° C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

REFERENCES:
patent: 6190752 (2001-02-01), Do et al.
patent: 6383989 (2002-05-01), Jia et al.
patent: 6537689 (2003-03-01), Schoop et al.
patent: 2003/0144150 (2003-07-01), Arendt et al.

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