Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1996-02-15
1998-06-30
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 86, 117108, 117202, C30B 2516
Patent
active
057727589
ABSTRACT:
Methods and apparatus are provided for monitoring deposition and pre-deposition characteristics such as the growth rates, oxide desorption, surface reconstruction, anion surface exchange reaction and smoothness of the surface of rotating substrates in near real-time during molecular beam epitaxy by processing the data in the time domain and for controlling a deposition apparatus in near real-time. An apparatus for extracting the characteristics and controlling the deposition apparatus in near real-time includes the following: (a) the deposition apparatus having a rotating substrate, (b) an energy pattern generator for subjecting the substrate to a beam of energy and for producing energy patterns, (c) an imaging unit for obtaining video images of the energy patterns, video images each having pixels, (d) a data processing unit for monitoring a selected set of the pixels on each of the video images, generating time-domain data for each video image and generating deposition parameters in near real-time, and (e) a deposition control unit for controlling the deposition apparatus in response to receiving the deposition parameters in near real-time. The method of extracting the characteristics and controlling the deposition apparatus in near real-time includes the following steps: obtaining video images of energy patterns coming from the substrate, monitoring a selected set of the pixels on each video image to generate time-domain data, filtering the time-domain data in near real-time, and controlling the deposition apparatus in near real-time.
REFERENCES:
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4931132 (1990-06-01), Aspnes et al.
patent: 5120393 (1992-06-01), Kubo et al.
patent: 5238525 (1993-08-01), Turner et al.
Maes et al, "Detection of Misfit Strain Relaxation in MBE Grown Si1-x Gex Films By Dynamic . . . ", Mechanisms of Heteropitaxial Growth Symp. Mater Res. Soc. 1992 pp. 427-431.
J. M. Van Hove, C. S. Lent, P. R. Pukite, P. I. Cohen, "Damped oscillations in reflection high energy electron diffraction during GaAs MBE," J. Vac. Sci. Tech., B1(3), 741 (Jul.-Sep. 1983).
J. H. Neave, B. A. Joyce, P. J. Dobson and N. Norton, "Dynamics of film growth of GaAs by MBE from RHEED Observations," Appl. Phys. A31, 1 (1983).
G. W. Turner and A. J. Isles, "Measurement of reflection high-energy electron diffraction oscillations during molecular-beam epitaxial growth of GaAs on a rotating substrate," J. Vac. Sci. Tech., B10(4), 1784 (Jul./Aug. 1992).
A. Savitzky and M. J. E. Golay, "Smoothing and differentiation of data by simplified least squares procedures," Anal. Chem., vol. 36, No. 8, 1627 (1964).
Collins Douglas A.
McGill Thomas C.
Papa George O.
California Institute of Technology
Kunemund Robert
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