Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-04-10
2007-04-10
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S010000, C257S011000, C257S021000, C257S053000, C257S054000, C257S055000, C257S056000, C257S113000, C257S184000, C257S185000, C257S188000, C257S189000, C257S225000, C257S227000, C257S257000, C257S258000, C257S290000, C257S291000, C257S414000, C257S431000, C257S432000, C257S461000, C257S462000, C257S463000, C257S464000, C257S749000
Reexamination Certificate
active
10920537
ABSTRACT:
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semiconducting blocking region of an impurity band semiconducting device included in a solid state photon detector.
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D'Souza Arvind I.
Hogue Henry H.
Stapelbroek Maryn G.
DRS Sensors & Targeting Systems, Inc.
Sonnenschein Nath & Rosenthal LLP
Soward Ida M.
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