Near hermetic power chip on board device and manufacturing...

Details Near hermetic power chip on board device and manufacturing... Near hermetic power chip on board device and manufacturing...

2005-03-29

2005-03-29

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S787000, C438S106000

Reexamination Certificate

active

06873049

ABSTRACT:
Near-hermetic performance has been reported for power semiconductor devices having a silicon carbide layer deposited on the surface at the semiconductor wafer level. The P-COB device also includes a conformal coating on the silicon carbide layer, which extends the expected lifetime of the P-COB device longer than those devices active coatings.

REFERENCES:
patent: 5685071 (1997-11-01), Gates, Jr. et al.
www.manufacturingcenter.com/dfx/archives, “Microsealing: Passivation Processing Provides Wafer-Level Hermetic Protection”. Designfax, Jun. 2001, pp. 1 and 2, Nelson Publishing, Inc.

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