Near hermetic packaging of gallium arsenide semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Housing or package filled with solid or liquid electrically...

Reexamination Certificate

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C257S778000, C257S787000

Reexamination Certificate

active

06982480

ABSTRACT:
A near-hermetic microwave semiconductor device, suitable for wideband high frequency applications including Phased Array Antenna systems, includes a PWB as a substrate; a GaAs Monolithic Microwave Integrated Circuit (MMIC) disposed on the substrate; a silicon carbide sealant disposed on the MMIC; and a Backside Interconnect with solder attachment which connects the substrate to the silicon carbide-coated MMIC. A conformal coating is disposed on the sealant, and a cover is disposed on the conformally-coated MMIC.

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Peter P. Black and Donald E. Dunstone, “Development of Plastic Encapsulated Microcircuit Coating Processes Form Military Applications”, Army RD&A, Jan.-Feb. 2000, pp. 8-11, Department of the Army.

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