Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Distributive type parameters
Patent
1997-07-23
1998-07-14
Brock, Michael
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Distributive type parameters
324639, 324642, G01N 2200
Patent
active
057810184
ABSTRACT:
A microwave microscope comprising a microwave waveguide having a probe end positioned closely above the surface to be probed such that the surface is in the near field of the microwave radiation. The end of the probe facing the surface is covered with a metallic foil or a conducting film deposited over a dielectric layer and having a rectangular slit formed therein. The long dimension of the slit is nearly resonant with the microwave, that is, just slightly longer than one-half the microwave wavelength. The short dimension is substantially shorter than long dimension and is chosen such that the slitted end is transparent to the microwave. Thereby, substantial microwave power is emitted through the slit with fine resolution that is determined by the short dimension of the slit. The probe is scanned across the surface in the direction of the short slit dimension, and its resolution is approximately equal to the short slit dimension. Preferably, the end is convexly curved along the direction of the long slit dimension so that only a portion of the slit is in the near field, thereby reducing the effective lateral dimension.
REFERENCES:
patent: 2407068 (1946-09-01), Fiske et al.
patent: 3102232 (1963-08-01), Leonard et al.
patent: 3144601 (1964-08-01), Slabodsky
patent: 4492915 (1985-01-01), Caspers
patent: 4994818 (1991-02-01), Keilman
patent: 5081414 (1992-01-01), Kusama et al.
patent: 5103182 (1992-04-01), Moslehi
Dahm et al., "ESR imaging study of the spin distribution in ladder-type pmer films containing spatially selective conducting patterns," Polymers for Advanced Technologies, vol. 1, pp. 247-252, 1990.
Wang et al., "High spatial resolution dielectric constant uniformity measurements . . . ," IEEE MTT-S International Microwave Symposium, 8-10 May 1990, Dallas, Texas, Digest, vol. 3, pp. 1121-1124.
Ash et al., Super-resolution Aperture Scanning Microscope, Nature, vol. 237, pp. 510-512, 1972.
Bryant et al., "Noncontact Technique for the Local Measurement of Semiconductor Resistivity," Review of Scientific Instruments, vol. 36, pp. 1614-1617, 1965.
Merz et al., Physical Review Letters, vol. 70, 1993, pp. 651-653.
Tabib-Azar et al., "Nondestructive characterization of materials by evanescent microwaves," Measurement Science Technology, vol. 4, pp. 583-590, 1993.
Druon et al., "Novel microwave device for nondestructive electrical characterization of semiconducting layers," Review of Scientific Instruments, vol. 61, 3431-3434, 1990.
Moreno, Microwave transmission design data (Dover, New York, 1958), p. 158.
Davidov Dan
Golosovsky Michael
Brock Michael
Guenzer Charles S.
Yissum Research Development Company of the Hebrew University of
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