Near-field photomask and near-field exposure apparatus...

Details Near-field photomask and near-field exposure apparatus... Near-field photomask and near-field exposure apparatus...

2007-08-28

2007-08-28

Huff, Mark F. (Department: 1756)

Photocopying

Projection printing and copying cameras

Combined with or convertible to a contact printer

C355S071000, C355S076000, C430S005000

Reexamination Certificate

active

10648317

ABSTRACT:
A near-field photomask includes a light shield film having openings to constitute a light shield portion. The photomask can be used to expose an exposure target with near-field light generated through the openings. The openings formed in the light shield film include two or more parallel rows of first slit openings each having a width smaller than 100 nm, and two or more parallel rows of second slit openings each having a width smaller than 100 nm, which extend perpendicularly to the rows of first slit openings while interlinking at least two of the rows of first slit openings. A near-field exposure apparatus includes the near-field photomask with a positioning unit and a source for illuminating polarized light parallel to the first slit openings for forming a latent-dot-image on an exposure target only where a second slit opening crosses the light shield portion on the near-field photomak.

REFERENCES:
patent: 6171730 (2001-01-01), Kuroda et al.
patent: 6187482 (2001-02-01), Kuroda et al.
patent: 6236033 (2001-05-01), Ebbesen et al.
patent: 2001/0046719 (2001-11-01), Yamaguchi et al.
patent: 2002/0071106 (2002-06-01), Yano et al.
patent: 2005/0026047 (2005-02-01), Yang
Alkaisi, M. M. et al., “Sub-diffraction-limited patterning using evansescent near-field optical lithography”, (1999) Applied Physics Letters, vol. 75, No. 22, pp. 3560-3562.

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