Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area
Patent
1997-05-09
1999-02-02
Valentine, Donald R.
Electrolysis: processes, compositions used therein, and methods
Electrolytic coating
Coating selected area
205135, 205136, 205137, 205221, 205664, C25D 502, C25D 504, C25F 302
Patent
active
058659781
ABSTRACT:
A new field of technology, near-field photolithography, is proposed. In near-field photolithography, an opaque pattern having a nanoscale resolution is made using a modified scanning tunneling microscope to deposit the opaque material on an electrically conductive material. A transparent sheet of indium tin oxide is patterned with a plurality of opaque copper deposits having a nanoscale resolution. The patterned indium tin oxide is then used as a photolithographic mask in the optical near-field. Near-field resolution is not diffraction limited, and near-field photolithography is able to pattern objects with sub-wavelength resolution. As a result, smaller semiconductor microchips can be manufactured and a new nanotechnology, e.g., nanomachines, can be developed. The scanning tunneling microscope (STM) is used as an "electrochemical paintbrush" to transfer the copper from a massive copper supply to the STM electrode tip and then to the ITO surface without degrading the STM tip.
REFERENCES:
patent: 2721838 (1955-10-01), Visser
patent: 4968390 (1990-11-01), Bard et al.
patent: 5085746 (1992-02-01), Musselman et al.
patent: 5286355 (1994-02-01), Fainchtein et al.
patent: 5288998 (1994-02-01), Betzig et al.
patent: 5366613 (1994-11-01), Suda et al.
patent: 5504338 (1996-04-01), Marrian et al.
patent: 5630932 (1997-05-01), Lindsay et al.
patent: 5686207 (1997-11-01), Suda et al.
Fischer et al. "Submicroscopic pattern replication with visible light" J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 881-885.
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