Near-field photo-lithography using nano light emitting diodes

Details Near-field photo-lithography using nano light emitting diodes Near-field photo-lithography using nano light emitting diodes

2007-09-25

2007-09-25

McElheny, Jr., Donald E. (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system in a specific environment

Electrical signal parameter measurement system

C359S738000

Reexamination Certificate

active

11241182

ABSTRACT:
An embodiment of the present invention is a technique to pattern features. An array of nanowires is placed at a distance to a resist layer. The array forms a plurality of light emitting diodes (LEDs). The distance corresponds to a near-field region of the light emitted by the LEDs with respect to the resist layer. A control circuit controls the LEDs to emit the light to pattern a feature in the resist layer.

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