Near field optical probe having an internal near field...

Radiant energy – Photocells; circuits and apparatus – Optical or pre-photocell system

Reexamination Certificate

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Reexamination Certificate

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06995350

ABSTRACT:
In a near field optical probe, a through hole having an aperture is provided in a semiconductor photodetector including at least a first-conductive-type high-concentration impurity layer, a first-conductive-type low-concentration impurity layer and a second-conductivity impurity-introduced region.

REFERENCES:
patent: 4577209 (1986-03-01), Forrest et al.
patent: 4770536 (1988-09-01), Golberstein
patent: 5583286 (1996-12-01), Matsuyama
patent: 03-171434 (1991-07-01), None
patent: 05-164968 (1993-06-01), None
patent: 05-226686 (1993-09-01), None
patent: 08-334521 (1996-12-01), None
patent: 09-120538 (1997-05-01), None
patent: 9-198830 (1997-07-01), None
M. Ohtsu, et al., The Institute of Electronics Information and Communication Engineers, vol. 81, No. 3, pp. 119-126, “Near Field Optics and its Application to Optical Memory”, Mar. 1998.

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