Near-field exposure mask, near-field exposure apparatus, and...

Photocopying – Contact printing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C355S075000, C355S076000, C355S091000, C430S005000, C430S396000

Reexamination Certificate

active

07605908

ABSTRACT:
A near-field exposure mask includes a light blocking film having an opening smaller than a wavelength of exposure light, and a mask base material for holding the light blocking film. The near-field exposure mask is configured and positioned to effect exposure of an object to be exposed to near-field light generated corresponding to the opening during contact thereof with the object to be exposed. The mask base material is transparent to the exposure light and comprises a synthetic resin material having Young's modulus in a range of 1 GPa or more to 10 GPa or less.

REFERENCES:
patent: 6171730 (2001-01-01), Kuroda et al.
patent: 6187482 (2001-02-01), Kuroda et al.
patent: 6236033 (2001-05-01), Ebbesen et al.
patent: 6632593 (2003-10-01), Yamaguchi et al.
patent: 7050144 (2006-05-01), Mizutani et al.
patent: 7144682 (2006-12-01), Inao et al.
patent: 7144685 (2006-12-01), Mizutani et al.
patent: 7279253 (2007-10-01), Yamada et al.
patent: 7315354 (2008-01-01), Mizutani
patent: 2003/0103195 (2003-06-01), Tsuruma et al.
patent: 2004/0166421 (2004-08-01), Yamaguchi et al.
patent: 2005/0227153 (2005-10-01), Tsuruma et al.
patent: 2005/0266321 (2005-12-01), Tsuruma et al.
patent: 2006/0003236 (2006-01-01), Mizutani et al.
patent: 2006/0003269 (2006-01-01), Ito et al.
patent: 2006/0014108 (2006-01-01), Ito et al.
patent: 2006/0110693 (2006-05-01), Kuroda et al.
patent: 2006/0124834 (2006-06-01), Mizutani et al.
patent: 2006/0160036 (2006-07-01), Mizutani
patent: 2007/0082279 (2007-04-01), Mizutani et al.
patent: 2007/0287100 (2007-12-01), Mizutani et al.
patent: 7-106229 (1995-04-01), None
patent: 2003-156834 (2003-05-01), None
M.M. Alkaisi, “Sub-diffraction-limited patterning using evanescent near-field optical lithography,” Applied Physics Letters, vol. 75, No. 22, Nov. 29, 1999, pp. 3560-3562.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Near-field exposure mask, near-field exposure apparatus, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Near-field exposure mask, near-field exposure apparatus, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Near-field exposure mask, near-field exposure apparatus, and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4061256

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.