Near field exposure mask, method of forming resist pattern...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S322000

Reexamination Certificate

active

07968256

ABSTRACT:
Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l0; a light shielding layer l2formed above the transparent mask matrix l0and containing silicon; a reflective layer l1formed between the transparent mask matrix l0and the light shielding layer l2; and an opening pattern provided in the reflective layer l1and the light shielding layer l2and being less in size than an exposure wavelength λ (nm), wherein the reflectance at an interface between the transparent mask matrix l0and the reflective layer l1is higher than a reflectance at an interface between a transparent mask matrix and a light shielding layer formed on the transparent mask matrix and containing silicon of a near field exposure mask which has no reflective layer between the transparent mask matrix and the light shielding layer.

REFERENCES:
patent: 6171730 (2001-01-01), Kuroda et al.
patent: 6444372 (2002-09-01), McCullough
patent: 6720115 (2004-04-01), Inao et al.
patent: 7547503 (2009-06-01), Ito et al.
patent: 7659039 (2010-02-01), Ito et al.
patent: 2007/0212806 (2007-09-01), Ito
patent: 2007/0218398 (2007-09-01), Ito et al.
patent: 2008/0085479 (2008-04-01), Yamaguchi et al.
patent: 2008/0187864 (2008-08-01), Ito et al.
patent: 2008/0187865 (2008-08-01), Ito et al.
patent: 2009/0208850 (2009-08-01), Ito et al.
patent: 1 096 312 (2001-05-01), None
patent: 7-106229 (1995-04-01), None
patent: 2001-166453 (2001-06-01), None
U.S. Appl. No. 11/913,922, International Filing Date Oct. 10, 2007, Ito, et al.
PCT International Search Report and Written Opinion of the International Searching Authority in International Application No. PCT/JP2007/070015, Mailing Date Feb. 12, 2008.
M. M. Alkaisi, et al., “Sub-diffraction-limited patterning using evanescent near-field optical lithography”, Applied Physics Letters, vol. 75, No. 22, 1999, pp. 3560-3562.
N. Mizutani, et al., “Photomasks with Amorphous Si Absorber for Near-field Mask Lithography”, 25a-ZB-1, Extended Abstracts of the 53rd Spring Meeting of Japan, 2005, p. 757.
G. Latini, et al., “Investigation of heating effects in near-field experiments with luminescent organic semiconductors”, Synthetic Metals, vol. 147, 2004, pp. 165-169.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Near field exposure mask, method of forming resist pattern... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Near field exposure mask, method of forming resist pattern..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Near field exposure mask, method of forming resist pattern... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2669924

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.