Radiation imagery chemistry: process – composition – or product th – Registration or layout process other than color proofing
Reexamination Certificate
2011-01-18
2011-01-18
Young, Christopher G (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Registration or layout process other than color proofing
C430S327000, C430S966000, C355S053000, C355S067000, C378S034000, C378S210000
Reexamination Certificate
active
07871744
ABSTRACT:
A near-field exposure apparatus includes a near-field exposure mask and a mechanism places a substrate, to be exposed, opposed to the near-field exposure mask. A mechanism performs relative alignment of the near-field exposure mask and the substrate to be exposed. A mechanism closely contacts the near-field exposure mask and the substrate to be exposed, with each other. A mechanism projects exposure light to the near-field exposure mask, and a soft X-ray irradiating device removes static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed such that the near-field exposure mask is located between the soft X-ray irradiating device and the substrate to be exposed.
REFERENCES:
patent: 6090176 (2000-07-01), Yoshitake et al.
patent: 6171730 (2001-01-01), Kuroda et al.
patent: 2000-321777 (2000-11-01), None
patent: 2005-101133 (2005-04-01), None
International Search Report dated Feb. 5, 2008, which was mailed in a Communication dated Feb. 21, 2008, in corresponding International Application No. PCT/JP2007/070220.
Written Opinion of the International Searching Authority mailed Feb. 21, 2008, issued in International Application No. PCT/JP2007/070220.
McNab, S., et al. “Effects of mask materials on near field optical nanolithography,” Materials Research Society Symposium Proceedings, Materials Research Society, Pittsburgh, PA, vol. 705, Nov. 25, 2001, pp. 107-112.
Extended Abstracts (The 53rdSpring Meeting, 2006); The Japan Society of Applied Physics and Related Societies, No. 2, Mar. 22, 2006, p. 757, with translation.
Inao Yasuhisa
Ito Toshiki
Mizutani Natsuhiko
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Young Christopher G
LandOfFree
Near-field exposure apparatus and near-field exposure method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Near-field exposure apparatus and near-field exposure method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Near-field exposure apparatus and near-field exposure method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2709741