nBn and pBp infrared detectors with graded barrier layer,...

Details nBn and pBp infrared detectors with graded barrier layer,... nBn and pBp infrared detectors with graded barrier layer,...

2008-10-10

2010-06-15

Hannaher, Constantine (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S370010

Reexamination Certificate

active

07737411

ABSTRACT:
An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

REFERENCES:
patent: 2006/0056466 (2006-03-01), Belenky et al.
patent: 2007/0215900 (2007-09-01), Maimon
patent: 2008/0111152 (2008-05-01), Scott et al.
Bishop, G. et al., “nBn detectors based on InAs/GaSb type-II strain layer superlattice”, J. Vac. Sci. Technol. B 26(3), May/Jun. 2008, American Vacuum Society, (May 30, 2008), pp. 1145-1148.
Klipstein, Philip ““XBn” Barrier Photodetectors for High Sensitivity and High Operating Temperature Infrared Sensors”, Infrared Technology and Applications XXXIV, edited by Bjorn F. Andresen, Gabor F. Fulop, Paul R. Norton, Proc. of SPIE vol. 6940, 69402U, (2008),12 pages.
Maimon, S. et al., “nBn detector, an infrared detector with reduced dark current and higher operating temperature”, Applied Physics Letters 89, 151109, American Institute of Physics, (Oct. 10, 2006), 3 pages.

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