Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-06-16
1990-09-11
Willis, Prince E.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
29599, 20419224, 252512, 252518, 423600, 427 62, 427 63, 501 73, 501134, 505730, 505731, 505775, 505801, 505806, 505816, H01C 3912, C23C 1434, B05D 512
Patent
active
049563378
ABSTRACT:
A superconductive material with a superconducting critical temperature of at least 77.degree. K. comprising 20 at. % Nb, 10 at. % Si, 10 at. % Al and 60 at. % O is provided by simultaneous vapor-phase physical deposition or sputtering of Nb, Si and Al onto a heated sapphire substrate under oxygen-containing atmosphere, followed by a rapid quenching or post-oxidization of Nb-Si-Al ternary system composition having an Nb/Si/Al atomic ratio of 2/1/1. The high critical temperature allows abundantly existing, cheap available liquid nitrogen to be used as a cryogen for developing superconductivity.
REFERENCES:
Wang et al., "High Rate Sputter-Deposited Nb.sub.3 X Containing Oxygen", AIME 1976, Fall Meeting, 9/1986.
Gavaler et al., "The Effect of Oxygen on the Low Temperature Growth of the High-Tc A15 Superconductors", Conference on Superconductivity in d- and f-Band Metals, Karlsnehe, F. R. Germany, Jun. 1982.
Ihara et al., "Oxidation Mechanism of the Surface of A15 Superconductors", International Cryogenic Materials Conf., 5th Plenum Press 1984.
Ogushi, Appl. Phys. Lett. 48 (17), Apr. 1986, pp. 1167-1168.
Kagoshima University
Skaling Linda D.
Willis Prince E.
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