Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2006-06-13
2006-06-13
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S009000, C257S015000, C257S016000, C257S017000, C257S018000, C257S019000, C257S020000, C257S021000, C257S022000, C257S028000
Reexamination Certificate
active
07061014
ABSTRACT:
Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3(ZnO)m, wherein M1is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
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Hirano Masahiro
Hosono Hideo
Kamiya Toshio
Orita Masahiro
Ota Hiromichi
Japan Science and Technology Agency
Soward Ida M.
Weterman, Hattori, Daniels & Adrian, LLP.
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