Native oxide technique for preparing clean substrate surfaces

Details Native oxide technique for preparing clean substrate surfaces Native oxide technique for preparing clean substrate surfaces

1975-08-15

1976-07-13

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156 17, 156610, 156612, H01L 21203, H01L 21306, H01L 21316

Patent

active

039691640

ABSTRACT:
Surface contamination of Group III(a)-V(a) substrates prior to epitaxial growth can influence structural, optical, and electrical properties of the resulting layers. Of the common contaminants, sulfur, nitrogen, carbon, and oxygen, which are found on substrate surfaces, only carbon cannot be removed by simple heating. By passivating the substrate surface with a native oxide coating after chemical etching and before atmospheric exposure, the carbon-containing contamination can be virtually eliminated since these compounds have low sticking coefficients on the native oxide. The oxide can then be readily stripped off by heating in a vacuum to leave essentially an atomically clean substrate surface.

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patent: 3751310 (1973-08-01), Cho
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Cho, A. Y., "Morphology of-GaAs-Surface Structures."
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Cho et al., "Surface Structures-Films of GaAs," Solid State Electronics, vol. 14, 1971, pp. 125-132.
Cho, et al., "Mg-Doped GaAs and Ga.sub.1-x Al.sub.x As by Epitaxy," J. Applied Physics, vol. 43, No. 12, Dec. 1972, pp. 5118-5123.
Larrabee, G. B., "Contamination of Semiconductor Surfaces," J. Electrochem. Soc., vol. 108, No. 12, Dec. 1961, pp. 1130-1134.

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