Native oxide reduction for sealing nitride deposition

Details Native oxide reduction for sealing nitride deposition Native oxide reduction for sealing nitride deposition

1987-10-22

1989-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG81, 148DIG114, 148DIG118, 357 49, 437 69, 437238, 437939, 437946, 437978, H01L 2176, H01L 21318

Patent

active

048552585

ABSTRACT:
A process for forming a thin sealing layer of silicon nitride directly upon a silicon substrate to minimize bird's beak encroachment. The process employs in situ fabrication whereby the native oxide is removed from the silicon substrate by etching the hydrogen or hydrogen chloride and followed in direct succession, and in the absence of exposure to an oxidizing environment, with the deposition of a silicon nitride layer by LPCVD. Bird's beak encroachment is incrementally reduced by the absence of the native oxide layer as a path for oxygen species movement during the field oxide growth.

REFERENCES:
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4373965 (1983-02-01), Smigelski
patent: 4402997 (1983-09-01), Hogan et al.
patent: 4428975 (1984-01-01), Dahm et al.
patent: 4435447 (1984-03-01), Ito et al.
patent: 4472459 (1984-09-01), Fisher
patent: 4551910 (1985-11-01), Patterson
patent: 4588610 (1986-05-01), Yamazaki
patent: 4645683 (1987-02-01), Gourrier et al.
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4699825 (1987-10-01), Sakai et al.

Affiliated with

Also associated with

Rating

Native oxide reduction for sealing nitride deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Native oxide reduction for sealing nitride deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Native oxide reduction for sealing nitride deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-905439