Native oxide of an aluminum-bearing group III-V semiconductor

Details Native oxide of an aluminum-bearing group III-V semiconductor Native oxide of an aluminum-bearing group III-V semiconductor

1995-01-26

1996-10-22

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

In compound semiconductor material

257632, 257638, H01L 2712

Patent

active

055679803

ABSTRACT:
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.

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