Native growth of semiconductor oxide layers

Details Native growth of semiconductor oxide layers Native growth of semiconductor oxide layers

1976-06-15

1977-12-13

Edmundson, F.C.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

250531, B01K 100

Patent

active

040627470

ABSTRACT:
An amorphous, stoichiometric, native, semiconductor oxide layer, with a sharp interface between the oxide layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate.

REFERENCES:
patent: 3287243 (1966-11-01), Ligenza
patent: 3957608 (1976-05-01), Streel

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