Narrow width trenches for field isolation in integrated circuits

Details Narrow width trenches for field isolation in integrated circuits Narrow width trenches for field isolation in integrated circuits

1997-11-04

1999-03-02

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438430, H01L 2176

Patent

active

058770666

ABSTRACT:
An integrated circuit device has a plurality of active devices which are formed on a semiconductor body. A plurality of narrow isolating regions of insulating material are vertically formed on the semiconductor body such that at least one of the narrow isolating regions separates and thereby isolates adjacent active devices. Essentially all of said isolating regions are substantially equal in width, preferably less than or equal to about 0.5 .mu.m.

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