Narrow width EEPROM with single diffusion electrode formation

Details Narrow width EEPROM with single diffusion electrode formation Narrow width EEPROM with single diffusion electrode formation

1990-11-21

1992-02-04

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 54, 365185, H01L 2968, H01L 2934, G11C 1134

Patent

active

050863258

ABSTRACT:
An EEPROM design featuring narrow linear electrodes including a source, a drain, a thin oxide, channel and floating gate. A pair of linear, opposed field oxide barrier walls form widthwise boundaries of the active structure which can be very closely spaced. The drain electrode, implanted in the substrate, abuts both opposed field oxide lateral walls, but does not extend under either wall. The source, drain and channel are formed in a single implant followed by diffusion after the field oxide barrier walls are formed, but prior to formation of the floating gate. All abut opposed field oxide walls in a stripe design. A control gate is disposed over the floating gate. The combination of opposed field oxide barrier walls, a stripe electrode design, and single step implant for electrode formation results in a very compact cell, utilizing a simplified EEPROM process.

REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky
patent: 4375087 (1983-02-01), Wanlass
patent: 4477825 (1984-10-01), Yaron et al.
patent: 4822750 (1989-04-01), Perlegos et al.
patent: 5008721 (1991-04-01), Gill et al.
Harari et al., "A 256-Bit Nonvolatile Static RAM", 1978 IEEE International Solid State Circuits Conference, Digest of Technical Papers, pp. 108-109.

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