Narrow line width pattern fabrication

Details Narrow line width pattern fabrication Narrow line width pattern fabrication

1984-06-29

1985-10-29

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423F, 427 38, 118723, H01J 37317

Patent

active

045502579

ABSTRACT:
The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.

REFERENCES:
patent: 4197332 (1980-04-01), Broers et al.
patent: 4316093 (1982-02-01), Broers et al.
patent: 4343993 (1982-08-01), Binnig et al.
patent: 4382186 (1983-05-01), Denholm et al.
Physical Review Letters, vol. 49, No. 1, Jul. 5, 1982, p. 57--"Surface Studies by Scanning Tunneling Microscopy" by G. Binning et al.
J. Appl. Phys. 53(7), Jul. 1982, p. 5052--"On Tunneling in Metal-Oxide-Silicon Structures" by Weinberg.
Science vol. 220, No. 4592, Apr. 1983, p. 43--"IBM Images Surfaces by Electron Tunneling" by A. L. Robinson.
Physikalische Blatter 39(1983) No. 7, p. 176--"Einzelne Atome aufgelost mit dem Raster-Tunnel-Mikroskop (RTM)" by Binnig et al.

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