Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2005-07-26
2005-07-26
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C257S327000, C257S347000
Reexamination Certificate
active
06921963
ABSTRACT:
A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.
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An Judy Xilin
Dakshina-Murthy Srikanteswara
Krivokapic Zoran
Advanced Micro Devices Inc
Ho Tu-Tu
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