Narrow band-gap semiconductor CCD imaging device and method of f

Details Narrow band-gap semiconductor CCD imaging device and method of f Narrow band-gap semiconductor CCD imaging device and method of f

1978-10-10

1980-11-04

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29590, 357 24, 357 61, 357 91, B01J 1700

Patent

active

042311497

ABSTRACT:
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.

REFERENCES:
patent: 3931674 (1976-01-01), Amelio
patent: 4035665 (1977-07-01), Borel
patent: 4097885 (1978-06-01), Walsh
Infrared Physics, "Tunnel Current Limitations of Narrow Bandgap Infrared Charge Coupled Devices" by Anderson, Mar. 1977, vol. 17, No. 2, pp. 147-164.

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